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【英語タイトル】GaN Power Devices Market : Global Industry Analysis (2012 - 2016) and Opportunity Assessment (2017 - 2027)

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【レポートの概要】

High demand in the consumer electronics industry and varied applications of GaN transistors expected to boost the growth of the GaN (Gallium Nitride) power devices market in Japan
The Japanese electronics industry is one of the largest consumer electronics industries in the world. With a large revenue share, demand for semiconductors is high and GaN power devices being compact, efficient and with low capacitance, result in minimising energy losses during charging and discharging. This is likely to encourage demand in the market and subsequently drive overall market growth.

GaN is widely used in transistors and due to its enhanced properties such as high thermal conductivity, high voltage potential and large critical fields, these devices offer high switching frequencies and high power density enabling transistors to operate at high voltage levels. These transistors have applications in various fields and provide good results, which is another factor driving market growth. For instance, in Jan 2016, Fujitsu Limited, which is a Japan based IT equipment manufacturing company, developed a GaN high-electron mobility transistor power amplifier with the world’s highest output performance for wideband wireless transmissions, which was 1.8X greater than before, enabling over 30% greater range for a high-speed wireless network.

Increasing research and development initiatives in GaN substrate is also responsible for the growth of the Japan GaN power devices market. Due to features of GaN technology such as high breakdown voltage, high switching frequency and miniaturisation, demand for GaN power devices has been increasing and continuous research is being done by research centres in Japan in order to determine and increase efficiencies of GaN. For example, a few years ago, a team of researchers from the Institute of Industrial Science at the University of Tokyo developed a new technology for creating GaN LEDs on the glass substrate. With the help of this development, manufacturing costs can be cut down along with actualising OLED light panels.

Shrink path of semiconductor power devices is one of the main factors restraining the growth of the GaN power devices market in Japan

One of the factors hampering the growth of the Gallium Nitride power devices market is the shrinking path of semiconductor power devices. With increasing high current density in GaN devices, problems related to existing assembly and interconnect technologies are increasing. The major problems include low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip demanding higher chip temperature and better thermal interconnects. The need to handle higher current densities per package and the same heat flow coming from smaller footprints to be removed from the ambient environment is also growing. These factors continue to remain a challenge for the GaN power devices market in Japan. In terms of value, the Japan GaN power devices market registered a CAGR of 17.8% from 2012–2016 and is expected to exhibit a CAGR of 23.1% from 2017–2027. In 2017, the Japan GaN power devices market is expected to be valued at more than US$ 100 Mn and is projected to reach more than US$ 800 Mn by the end of 2027. The GaN power devices market in Japan is expected to represent incremental opportunity of a little more than US$ 700 Mn between 2017 and 2027. The Japan regional market is projected to be the most attractive market in the global GaN power devices market during the forecast period in terms of value. However, in terms of year on year growth, the Latin America GaN power devices market will register high Y-o-Y growth rates throughout the forecast period.

【レポートの目次】

Table Of Content
1. Executive Summary

1.1. Market Overview

1.2. Market Analysis

1.3. FMI Analysis and Recommendations

2. Market Introduction

2.1. Market Taxonomy

2.2. Market Definition

3. Market View Point

3.1. Macro-Economic Factors

3.2. Opportunity Analysis

4. Global Market Analysis 2012–2016 and Forecast 2017–2027

4.1. Market Volume Projections

4.2. Market Size and Y-o-Y Growth

4.3. Absolute $ Opportunity

4.4. Value Chain

5. North America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

5.1. Introduction

5.2. Regional Market Dynamics

5.2.1. Drivers

5.2.2. Restraints

5.2.3. Trends

5.3. Market Size –Value (US$ Mn) By Country, 2012-2016

5.3.1. U.S.

5.3.2. Canada

5.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027

5.4.1. U.S.

5.4.2. Canada

5.5. Market Size – Value (US$ Mn) and Forecast By Technology

5.5.1. 4H SiC MOSFET

5.5.2. HEMT

5.5.3. Others

5.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

5.6.1. GaN SiC

5.6.2. GaN Si

5.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

5.7.1. Less than 150 mm

5.7.2. 150 mm-500 mm

5.7.3. More than 500 mm

5.8. Market Size –Value (US$ Mn) and Forecast By Industry

5.8.1. Consumer Electronics

5.8.2. Energy & Utilities

5.8.3. Automotive

5.8.4. IT & Telecom

5.8.5. Others

5.9. Drivers and Restraints: Impact Analysis

5.10. Market Attractiveness Analysis

5.10.1. By Country

5.10.2. By Technology

5.10.3. By Wafer Material

5.10.4. By Wafer Size

5.10.5. By Industry

5.11. Key Representative Market Participants

5.12. Market Presence (Intensity Map)

6. Western Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

6.1. Introduction

6.2. Regional Market Dynamics

6.2.1. Drivers

6.2.2. Restraints

6.2.3. Trends

6.3. Market Size –Value (US$ Mn) By Country, 2012-2016

6.3.1. Germany

6.3.2. France

6.3.3. U.K.

6.3.4. Spain

6.3.5. Italy

6.3.6. BENELUX

6.3.7. Nordic

6.3.8. Rest of Western Europe

6.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027

6.4.1. Germany

6.4.2. France

6.4.3. U.K.

6.4.4. Spain

6.4.5. Italy

6.4.6. BENELUX

6.4.7. Nordic

6.4.8. Rest of Western Europe

6.5. Market Size – Value (US$ Mn) and Forecast By Technology

6.5.1. 4H SiC MOSFET

6.5.2. HEMT

6.5.3. Others

6.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

6.6.1. GaN SiC

6.6.2. GaN Si

6.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

6.7.1. Less than 150 mm

6.7.2. 150 mm-500 mm

6.7.3. More than 500 mm

6.8. Market Size –Value (US$ Mn) and Forecast By Industry

6.8.1. Consumer Electronics

6.8.2. Energy & Utilities

6.8.3. Automotive

6.8.4. IT & Telecom

6.8.5. Others

6.9. Drivers and Restraints: Impact Analysis

6.10. Market Attractiveness Analysis

6.10.1. By Country

6.10.2. By Technology

6.10.3. By Wafer Material

6.10.4. By Wafer Size

6.10.5. By Industry

6.11. Key Representative Market Participants

6.12. Market Presence (Intensity Map)

7. Eastern Europe GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

7.1. Introduction

7.2. Regional Market Dynamics

7.2.1. Drivers

7.2.2. Restraints

7.2.3. Trends

7.3. Market Size –Value (US$ Mn) By Country, 2012-2016

7.3.1. Russia

7.3.2. Poland

7.3.3. Rest of Eastern Europe

7.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027

7.4.1. Russia

7.4.2. Poland

7.4.3. Rest of Eastern Europe

7.5. Market Size – Value (US$ Mn) and Forecast By Technology

7.5.1. 4H SiC MOSFET

7.5.2. HEMT

7.5.3. Others

7.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

7.6.1. GaN SiC

7.6.2. GaN Si

7.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

7.7.1. Less than 150 mm

7.7.2. 150 mm-500 mm

7.7.3. More than 500 mm

7.8. Market Size –Value (US$ Mn) and Forecast By Industry

7.8.1. Consumer Electronics

7.8.2. Energy & Utilities

7.8.3. Automotive

7.8.4. IT & Telecom

7.8.5. Others

7.9. Drivers and Restraints: Impact Analysis

7.10. Market Attractiveness Analysis

7.10.1. By Country

7.10.2. By Technology

7.10.3. By Wafer Material

7.10.4. By Wafer Size

7.10.5. By Industry

7.11. Key Representative Market Participants

7.12. Market Presence (Intensity Map)

8. Latin America GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

8.1. Introduction

8.2. Regional Market Dynamics

8.2.1. Drivers

8.2.2. Restraints

8.2.3. Trends

8.3. Market Size –Value (US$ Mn) By Country, 2012-2016

8.3.1. Brazil

8.3.2. Mexico

8.3.3. Rest of Latin America

8.4. Market Size –Value (US$ Mn) and Forecast By Country, 2017-2027

8.4.1. Brazil

8.4.2. Mexico

8.4.3. Rest of Latin America

8.5. Market Size – Value (US$ Mn) and Forecast By Technology

8.5.1. 4H SiC MOSFET

8.5.2. HEMT

8.5.3. Others

8.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

8.6.1. GaN SiC

8.6.2. GaN Si

8.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

8.7.1. Less than 150 mm

8.7.2. 150 mm-500 mm

8.7.3. More than 500 mm

8.8. Market Size –Value (US$ Mn) and Forecast By Industry

8.8.1. Consumer Electronics

8.8.2. Energy & Utilities

8.8.3. Automotive

8.8.4. IT & Telecom

8.8.5. Others

8.9. Drivers and Restraints: Impact Analysis

8.10. Market Attractiveness Analysis

8.10.1. By Country

8.10.2. By Technology

8.10.3. By Wafer Material

8.10.4. By Wafer Size

8.10.5. By Industry

8.11. Key Representative Market Participants

8.12. Market Presence (Intensity Map)

9. Asia Pacific Excluding Japan (APEJ) GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

9.1. Introduction

9.2. Regional Market Dynamics

9.2.1. Drivers

9.2.2. Restraints

9.2.3. Trends

9.3. Market Size – Value (US$ Mn) By Country, 2012-2016

9.3.1. China

9.3.2. India

9.3.3. Australia and New Zealand

9.3.4. ASEAN

9.3.5. Rest of APEJ

9.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027

9.4.1. China

9.4.2. India

9.4.3. Australia and New Zealand

9.4.4. ASEAN

9.4.5. Rest of APEJ

9.5. Market Size – Value (US$ Mn) and Forecast By Technology

9.5.1. 4H SiC MOSFET

9.5.2. HEMT

9.5.3. Others

9.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

9.6.1. GaN SiC

9.6.2. GaN Si

9.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

9.7.1. Less than 150 mm

9.7.2. 150 mm-500 mm

9.7.3. More than 500 mm

9.8. Market Size –Value (US$ Mn) and Forecast By Industry

9.8.1. Consumer Electronics

9.8.2. Energy & Utilities

9.8.3. Automotive

9.8.4. IT & Telecom

9.8.5. Others

9.9. Drivers and Restraints: Impact Analysis

9.10. Market Attractiveness Analysis

9.10.1. By Country

9.10.2. By Technology

9.10.3. By Wafer Material

9.10.4. By Wafer Size

9.10.5. By Industry

9.11. Key Representative Market Participants

9.12. Market Presence (Intensity Map)

10. Japan GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

10.1. Introduction

10.2. Regional Market Dynamics

10.2.1. Drivers

10.2.2. Restraints

10.2.3. Trends

10.3. Market Size – Value (US$ Mn) and Forecast By Technology

10.3.1. 4H SiC MOSFET

10.3.2. HEMT

10.3.3. Others

10.4. Market Size – Value (US$ Mn) and Forecast By Wafer Material

10.4.1. GaN SiC

10.4.2. GaN Si

10.5. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

10.5.1. Less than 150 mm

10.5.2. 150 mm-500 mm

10.5.3. More than 500 mm

10.6. Market Size –Value (US$ Mn) and Forecast By Industry

10.6.1. Consumer Electronics

10.6.2. Energy & Utilities

10.6.3. Automotive

10.6.4. IT & Telecom

10.6.5. Others

10.7. Drivers and Restraints: Impact Analysis

10.8. Market Attractiveness Analysis

10.8.1. By Country

10.8.2. By Technology

10.8.3. By Wafer Material

10.8.4. By Wafer Size

10.8.5. By Industry

10.9. Key Representative Market Participants

10.10. Market Presence (Intensity Map)

11. Middle East and Africa GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

11.1. Introduction

11.2. Regional Market Dynamics

11.2.1. Drivers

11.2.2. Restraints

11.2.3. Trends

11.3. Market Size – Value (US$ Mn) By Country, 2012-2016

11.3.1. GCC Countries

11.3.2. Turkey

11.3.3. Northern Africa

11.3.4. South Africa

11.3.5. Rest of MEA

11.4. Market Size – Value (US$ Mn) and Forecast By Country, 2017-2027

11.4.1. GCC Countries

11.4.2. Turkey

11.4.3. Northern Africa

11.4.4. South Africa

11.4.5. Rest of MEA

11.5. Market Size – Value (US$ Mn) and Forecast By Technology

11.5.1. 4H SiC MOSFET

11.5.2. HEMT

11.5.3. Others

11.6. Market Size – Value (US$ Mn) and Forecast By Wafer Material

11.6.1. GaN SiC

11.6.2. GaN Si

11.7. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

11.7.1. Less than 150 mm

11.7.2. 150 mm-500 mm

11.7.3. More than 500 mm

11.8. Market Size –Value (US$ Mn) and Forecast By Industry

11.8.1. Consumer Electronics

11.8.2. Energy & Utilities

11.8.3. Automotive

11.8.4. IT & Telecom

11.8.5. Others

11.9. Drivers and Restraints: Impact Analysis

11.10. Market Attractiveness Analysis

11.10.1. By Country

11.10.2. By Technology

11.10.3. By Wafer Material

11.10.4. By Wafer Size

11.10.5. By Industry

11.11. Key Representative Market Participants

11.12. Market Presence (Intensity Map)

12. Forecast Factors: Relevance and Impact

13. Forecast Assumptions

14. Competition Landscape

14.1. Market Structure

14.2. Market Share Analysis

14.3. Competition Intensity Mapping By Market Taxonomy

14.4. Competition Dashboard

14.5. Company Profiles (Details – Overview, Financials, Strategy, Recent Developments)

14.5.1. Qorvo, Inc.

14.5.2. NXP Semiconductors N.V.

14.5.3. Infineon Technologies AG

14.5.4. Panasonic Corporation

14.5.5. Toshiba Corporation

14.5.6. Texas Instruments Incorporated

14.5.7. GaN Systems Inc.

14.5.8. Efficient Power Conversion Corporation

14.5.9. Wolfspeed, Inc

14.5.10. Transphorm Inc.,

14.6. Other Players (Snapshot)

14.6.1. STMicroelectronics

14.6.2. AIXTRON SE

14.6.3. IQE PLC

14.6.4. EXAGAN

14.6.5. POWDEC

15. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027

15.1. Introduction / Key Findings

15.2. Market Size –Value (US$ Mn) and Forecast By Region

15.2.1. North America

15.2.2. Western Europe

15.2.3. Eastern Europe

15.2.4. Latin America

15.2.5. Asia Pacific Excluding Japan

15.2.6. Japan

15.2.7. Middle East and Africa

15.3. Market Attractiveness Analysis By Region

16. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Technology

16.1. Introduction

16.2. Market Size –Value (US$ Mn) and Forecast By Technology

16.2.1. 4H-SiC MOSFET

16.2.2. HEMT

16.2.3. Others

16.3. Key Trends / Developments

16.4. Market Attractiveness Analysis By Technology

17. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Material

17.1. Introduction / Key Findings

17.2. Market Size –Value (US$ Mn) and Forecast By Wafer Material

17.2.1. GaN SiC

17.2.2. GaN Si

17.3. Key Trends / Developments

17.4. Market Attractiveness Analysis By Wafer Material

18. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Wafer Size

18.1. Introduction / Key Findings

18.2. Market Size – Unit Shipment Volume and Value (US$ Mn) and Forecast By Wafer Size

18.2.1. Less than 150 mm

18.2.2. 150 mm-500 mm

18.2.3. More than 500 mm

18.3. Key Trends / Developments

18.4. Market Attractiveness Analysis By Wafer Size

19. Global GaN Power Devices Market Analysis 2012–2016 and Forecast 2017–2027, By Industry

19.1. Introduction / Key Findings

19.2. Market Size Value (US$ Mn) and Forecast By Industry

19.2.1. Consumer Electronics

19.2.2. Energy & Utilities

19.2.3. Automotive

19.2.4. IT & Telecom

19.2.5. Others

19.3. Key Trends / Developments

19.4. Market Attractiveness Analysis By Industry



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